Optimising the electronic and optoelectronic properties of thin-film diamond

被引：27

作者：

Gaudin, O ^{[1
]}

Watson, S ^{[1
]}

Lansley, SP ^{[1
]}

Looi, HJ ^{[1
]}

Whitfield, MD ^{[1
]}

Jackman, RB ^{[1
]}

机构：

[1] UCL, Dept Elect & Elect Engn, London WC1E 7JE, England

来源：

关键词：

diamond defects; photodetectors; TSC; photoconductivity;

D O I：

10.1016/S0925-9635(98)00292-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The realisation of effective UV photodetectors from thin-film diamond requires the selection of good-quality substrate material and careful device design. However, these alone are insufficient to yield high-performance characteristics: post-growth treatments are required to modify the optoelectronic properties of the diamond. Photoconductive devices fabricated in this way can be truly blind to visible light, fast and offer high levels of photoconductive gain. The origin of these improvements has been studied using thermally stimulated current (TSC) and photoconductivity measurements. The treatments used appear to provoke extremely high carrier lifetimes, encouraging high gain whilst eradicating extrinsic photoconduction. TSC reveals that a new trap state is introduced at (E(a)approximate to 0.6 eV). A model to explain the changes in device characteristics is discussed. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：886 / 891

页数：6

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