Cleaning thin-film diamond surfaces for device fabrication: An Auger electron spectroscopic study

被引:60
作者
Baral, B [1 ]
Chan, SSM [1 ]
Jackman, RB [1 ]
机构
[1] UNIV LONDON UNIV COLL,DEPT ELECTR & ELECT ENGN,LONDON WC1E 7JE,ENGLAND
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1996年 / 14卷 / 04期
关键词
D O I
10.1116/1.580063
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Auger electron spectroscopy was used to analyze polycrystalline thin-film diamond surfaces following the use of differing methods for the removal of unwanted nondiamond carbon. Exposing the film to a hydrogen plasma at the termination of the growth process is effective for producing a surface that gives an Auger spectrum typical of diamond with little contamination. Strongly oxidizing solutions involving sulfuric acid generate low concentrations of surface sulfur together with an oxide phase. However, in the case of an ammonium persulfate-sulfuric acid etchant solution, the Auger features associated with the diamond more closely resemble those of single crystal material suggesting that this treatment may offer better performance when used during the fabrication of thin-film diamond electronic devices. (C) 1996 American Vacuum Society.
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收藏
页码:2303 / 2307
页数:5
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