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ALUMINUM AND NICKEL CONTACT METALLIZATIONS ON THIN-FILM DIAMOND

被引：9
作者：
CHAN, SSM
PEUCHERET, C
MCKEAG, RD
JACKMAN, RB
JOHNSTON, C
CHALKER, PR
机构：
[1] UNIV LONDON UNIV COLL,LONDON WC1E 7JE,ENGLAND
[2] UKAEA,HARWELL LAB,DEPT SURFACE TECHNOL,HARWELL OX11 0RA,BERKS,ENGLAND
来源：
JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 04期
关键词：
D O I：
10.1063/1.360096
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Aluminum and nickel contact metallizations have been investigated on polycrystalline, randomly oriented diamond films of varying dopant concentrations. Hall measurements have been used to characterize the diamond films to indicate good control of dopant incorporation with carrier mobility comparable with those of the highest reported in similar films. Rectifying characteristics have been observed for both Al and Ni contacts provided the sheet resistance of the films is greater than 1200 Omega/sq. The thermal stability of these contacts have been investigated to 400 degrees C and Al diodes have been found to be electrically stable to such treatments. (C) 1995 American Institute of Physics.
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页码：2877 / 2879
页数：3
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