Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions

被引：30

作者：

Bessolov, VN

Lebedev, MV

Shernyakov, YM

Tsarenkov, BV

机构：

[1] A.F. Ioffe Phys.-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

基金：

俄罗斯基础研究基金会;

关键词：

lasers; optoelectronics; sulfur passivation;

D O I：

10.1016/S0921-5107(96)01817-X

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Sulfide treatment of InGaAs/AlGaAs SWQ lasers (lambda = 977 nm) in alcohol-based solutions increases the catastrophic optical damage limit. This increase is largest (50%) when the solvent with the lowest dielectric constant (tert-butanol) is used. (C) 1997 Elsevier Science S.A.

引用

收藏

页码：380 / 382

页数：3

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