Sulfur passivation of InGaAs/AlGaAs SQW laser (977 nm) facets in alcohol-based solutions

被引:30
作者
Bessolov, VN
Lebedev, MV
Shernyakov, YM
Tsarenkov, BV
机构
[1] A.F. Ioffe Phys.-Technical Institute, Russian Academy of Sciences, 194021, St. Petersburg
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期
基金
俄罗斯基础研究基金会;
关键词
lasers; optoelectronics; sulfur passivation;
D O I
10.1016/S0921-5107(96)01817-X
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Sulfide treatment of InGaAs/AlGaAs SWQ lasers (lambda = 977 nm) in alcohol-based solutions increases the catastrophic optical damage limit. This increase is largest (50%) when the solvent with the lowest dielectric constant (tert-butanol) is used. (C) 1997 Elsevier Science S.A.
引用
收藏
页码:380 / 382
页数:3
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