Investigation of hydrogen induced changes in SrBi2Ta2O9 ferroelectric films

被引：66

作者：

Zafar, S ^{[1
]}

Kaushik, V ^{[1
]}

Laberge, P ^{[1
]}

Chu, P ^{[1
]}

Jones, RE ^{[1
]}

Hance, RL ^{[1
]}

Zurcher, P ^{[1
]}

White, BE ^{[1
]}

Taylor, D ^{[1
]}

Melnick, B ^{[1
]}

Gillespie, S ^{[1
]}

机构：

[1] MOTOROLA INC,R&Q LAB,AUSTIN,TX 78721

来源：

JOURNAL OF APPLIED PHYSICS | 1997年 / 82卷 / 09期

关键词：

D O I：

10.1063/1.366179

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effect of hydrogen on strontium bismuth tantalate (SrBi2Ta2O9; SBT) ferroelectric capacitors is investigated. Using several analytical techniques such as x-ray diffraction, electron diffraction, Auger electron, scanning and transmission electron microscopies, the structural and compositional changes in the ferroelectric film are studied as a function of annealing gas and temperature. The mechanism for hydrogen induced damage to the capacitor is identified. Measurements show that the hydrogen induces both structural and compositional changes in the ferroelectric film. Hydrogen reacts with the bismuth oxide to form bismuth and the reduced bismuth diffuses out of the SBT film causing the electrodes to peel. (C) 1997 American Institute of Physics. [S0021-8979(97)04121-2].

引用

页码：4469 / 4474

页数：6

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