Dynamical study of the yellow luminescence band in GaN

被引：33

作者：

Hoffmann, A

Eckey, L

Maxim, P

Holst, JC

Heitz, R

Hofmann, DM

Kovalev, D

Stevde, G

Volm, D

Meyer, BK

Detchprohm, T

Hiramatsu, K

Amano, H

Akasaki, I

机构：

[1] TECH UNIV MUNICH,DEPT PHYS E16,D-85747 GARCHING,GERMANY

[2] NAGOYA UNIV,SCH ENGN,DEPT ELECT,NAGOYA,AICHI 46801,JAPAN

[3] MEIJO UNIV,DEPT ELECT & ELECT ENGN,NAGOYA,AICHI 468,JAPAN

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(96)00228-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A comprehensive study of the yellow photoluminescence (YL) in GaN epitaxial films grown by hydrid vapor phase epitaxy and by metal organic vapor phase epitaxy is presented including time-integrated and time-resolved photoluminescence (PL), PL excitation (PLE) and optically detected magnetic resonance (ODMR) experiments. ODMR reveals the participation of shallow and deep double donors based on the analysis of the g-values. This recombination model is supported by time-resolved investigations. PLE spectra show a close connection between the excitation processes of the YL band and of the inner transition of Fe3+ at 1.293 eV. Two-color stimulation experiments prove energy transfer between YL and the Fe3+ center by hole transfer, strongly confirming the YL recombination model involving a deep level 1.2 eV above the valence band. (C) 1997 Elsevier Science Ltd.

引用

页码：275 / 278

页数：4

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