Multimode quantitative scanning microwave microscopy of in situ grown epitaxial Ba1-xSrxTiO3 composition spreads

被引：49

作者：

Chang, KS ^{[1
]}

Aronova, M

Famodu, O

Takeuchi, I

Lofland, SE

Hattrick-Simpers, J

Chang, H

机构：

[1] Univ Maryland, Dept Mat Sci & Engn, College Pk, MD 20742 USA

[2] Univ Maryland, Ctr Superconduct Res, Dept Phys, College Pk, MD 20742 USA

[3] Rowan Univ, Dept Chem & Phys, Glassboro, NJ 08028 USA

[4] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

APPLIED PHYSICS LETTERS | 2001年 / 79卷 / 26期

关键词：

D O I：

10.1063/1.1427438

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have performed variable-temperature multimode quantitative microwave microscopy of in situ epitaxial Ba1-xSrxTiO3 thin-film composition spreads fabricated on (100) LaAlO3 substrates. Dielectric properties were mapped as a function of continuously varying composition from BaTiO3 to SrTiO3. We have demonstrated nondestructive temperature-dependent dielectric characterization of local thin-film regions. Measurements are simultaneously taken at multiple resonant frequencies of the microscope cavity. The multimode measurements allow frequency dispersion studies. We observe strong composition-dependent dielectric relaxation in Ba1-xSrxTiO3 at microwave frequencies. (C) 2001 American Institute of Physics.

引用

页码：4411 / 4413

页数：3

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