The Burstein-Moss effect in Cu2GeSe3:Co2+ single crystals

被引：31

作者：

Lee, JJ ^{[1
]}

Yang, CS

Park, YS

Kim, KH

Kim, WT

机构：

[1] Gyeongsang Natl Univ, Dept Phys, Chinju 660701, South Korea

[2] Gyeongsang Natl Univ, Res Inst Nat Sci, Chinju 660701, South Korea

[3] Chonnam Natl Univ, Dept Phys, Kwangju 500757, South Korea

来源：

JOURNAL OF APPLIED PHYSICS | 1999年 / 86卷 / 05期

关键词：

D O I：

10.1063/1.371141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Cu2GeSe3 and Cu2GeSe3:Co2+ single crystals are grown using the modified Bridgman method. The grown single crystals have orthorhombic structures. The energy band gaps for Cu2GeSe3 and Cu2GeSe3:Co2+ single crystals measured at 298 K were about 0.789 and 0.798 eV, respectively, and these gaps are due to direct transitions. The Burstein-Moss effect due to overlapping of the energy level of Co2+(T-d) and the conduction band of the Cu2GeSe3:Co2+ is observed. (C) 1999 American Institute of Physics. [S0021-8979(99)02617-1].

引用

页码：2914 / 2916

页数：3

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