OPTICAL ABSORPTION OF ARSENIC-DOPED DEGENERATE GERMANIUM

被引:133
作者
PANKOVE, JI
AIGRAIN, P
机构
来源
PHYSICAL REVIEW | 1962年 / 126卷 / 03期
关键词
D O I
10.1103/PhysRev.126.956
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:956 / &
相关论文
共 22 条
[1]  
AIGRAIN P, 1955, CR HEBD ACAD SCI, V241, P859
[2]  
BALTENSPERGER W, 1953, PHILOS MAG, V44, P1355
[3]  
BARDEEN J, 1949, PHYS REV, V75, P865
[4]  
BENOIT C, 1961, P INTERNATL C SEMICO, P426
[5]  
BENOITALAGUILLA.C, 1959, ANN PHYS PARIS, V5, P1187
[6]   ANOMALOUS OPTICAL ABSORPTION LIMIT IN INSB [J].
BURSTEIN, E .
PHYSICAL REVIEW, 1954, 93 (03) :632-633
[7]   EFFECT OF TEMPERATURE AND DOPING ON REFLECTIVITY OF GERMANIUM IN FUNDAMENTAL ABSORPTION REGION [J].
CARDONA, M ;
SOMMERS, HS .
PHYSICAL REVIEW, 1961, 122 (05) :1382-&
[8]   DIELECTRIC CONSTANT OF GERMANIUM AND SILICON AS A FUNCTION OF VOLUME [J].
CARDONA, M ;
PAUL, W ;
BROOKS, H .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :204-206
[9]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[10]   ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].
DEBYE, PP ;
CONWELL, EM .
PHYSICAL REVIEW, 1954, 93 (04) :693-706