In-plane dispersion of the quantum-well states of the epitaxial silver films on silicon

被引：76

作者：

Matsuda, I

Ohta, T

Yeom, HW ^{[1
]}

机构：

[1] Yonsei Univ, Atom Scale Surface Sci Res Ctr, Seoul 120749, South Korea

[2] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[3] Univ Tokyo, Dept Chem, Tokyo 1130033, Japan

来源：

PHYSICAL REVIEW B | 2002年 / 65卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.65.085327

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In-plane dispersion of the quantum-well states (QWS's) associated with the electron confinement in metastable epitaxial Ag films grown on the Si(111)7X7 and Si(001)2X1 surfaces is investigated by angle-resolved photoemission using synchrotron radiation. In contrast to the free-electron-like-behavior expected, these QWS's show intriguing dispersions such as (i) a significant enhancement of the in-plane effective mass with decreasing binding energy and (ii) a splitting of a QWS into two electronic states with different dispersions at off-normal emission. Such unexpected electronic properties of a QWS are obviously related to the substrate band structure. Further the QWS splitting is explained by the energy-dependent phase shift of the film-substrate interface occurring at the substrate band edge.

引用

页码：853271 / 853277

页数：7

共 47 条

[1] SURFACE ELECTRONIC-STRUCTURE OF A SINGLE-DOMAIN SI(111)4X1-IN SURFACE - A SYNCHROTRON-RADIATION PHOTOEMISSION-STUDY [J].