RECONSTRUCTION-DEPENDENT ORIENTATION OF AG(111) FILMS ON SI(001)

被引：14

作者：

FOLSCH, S ^{[1
]}

MEYER, G ^{[1
]}

WINAU, D ^{[1
]}

RIEDER, KH ^{[1
]}

HORNVONHOEGEN, M ^{[1
]}

SCHMIDT, T ^{[1
]}

HENZLER, M ^{[1
]}

机构：

[1] UNIV HANNOVER,INST FESTKORPERPHYS,D-30167 HANNOVER,GERMANY

来源：

PHYSICAL REVIEW B | 1995年 / 52卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.52.13745

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The growth of Ag on C-misoriented, single-domain Si(001) surfaces at 130 K yields continuous and epitaxial overlayers with a (111) orientation. The close-packed rows of Ag atoms are parallel to the (2X1) dimer rows and run perpendicular to the step edges. The dimer orientation can be rotated by 90 degrees by inducing a (3X2) reconstruction on the Si(001) surface. Again, single-crystal Ag(111) films are obtained; however, their in-plane orientation is now rotated by 90 degrees. In this case, the close-packed rows of Ag atoms are aligned parallel to the step edges.

引用

页码：13745 / 13748

页数：4

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