Low-threshold lasing from high-density InAs quantum dots of uniform size

被引：21

作者：

Saito, H

Nishi, K

Sugimoto, Y

Sugou, S

机构：

[1] NEC Corp Ltd, Optoelect & High Frequency Device Labs, Tsukuba, Ibaraki 3058501, Japan

[2] NEC Corp Ltd, Opt Interconnect Lab, RWCP, Tsukuba, Ibaraki 3058501, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 18期

关键词：

D O I：

10.1049/el:19991077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

To construct the active region of a Fabry-Perot laser, high-density InAs quantum dots having a narrow photoluminescence linewidth of similar to 30meV have been formed. A very low threshold current density of 76A/cm(2) was achieved at room temperature due to the high gain with narrow linewidth at the ground state of the quantum dots.

引用

页码：1561 / 1563

页数：3

共 6 条

[1] Formation of InAs/GaAs quantum dots by molecular beam epitaxy: Reversibility of the islanding transition [J].