Epitaxial growth of tin oxide on Pt(111):: Structure and properties of wetting layers and SnO2 crystallites -: art. no. 165403

被引:40
作者
Batzill, M [1 ]
Kim, J
Beck, DE
Koel, BE
机构
[1] Tulane Univ, Dept Phys, New Orleans, LA 70118 USA
[2] Univ So Calif, Dept Chem, Los Angeles, CA 90089 USA
关键词
D O I
10.1103/PhysRevB.69.165403
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin-oxide films were grown on Pt(111) substrates by oxidation of Sn/Pt surface alloys using NO2 exposures or by deposition of Sn in an NO2 ambient gas. Structural aspects of monolayer tin-oxide films were reported previously [Phys. Rev. B 64, 245402/1 (2001)]. At elevated substrate temperatures, growth of tin-oxide multilayers proceeds in a Stranski-Krastanov mode, i.e., the Pt substrate is covered with a monolayer thick tin-oxide wetting-layer before Sn-oxide crystallites form. The crystallites were tens to hundreds of nanometers in lateral size and were identified by scanning tunneling microscopy to be rutile SnO2. These had a height of a few monolayers exposing the (011) crystal plane parallel to the Pt substrate. The low misfit of this crystal face with respect to the Pt(111) lattice apparently stabilizes this plane which is otherwise relatively energetically unfavorable. These studies demonstrate the importance of metal substrates in imposing structure and crystallographic orientation on oxide films. X-ray photoelectron spectroscopy studies of the tin-oxide films confirmed the existence of three Sn states that have been labeled previously as metallic, "quasimetallic," and oxidic Sn. We conclude that the "quasimetallic" state results from oxidized Sn that is still alloyed within the Pt surface layer. Ultraviolet photoelectron spectroscopy of the valance band and electron energy loss spectroscopy confirmed a SnO2 stoichiometry for multilayer tin-oxide films. High-resolution electron energy loss spectroscopy was used to identify characteristic vibrational modes for the different monolayer films. The SnO2 crystallites, although only a few monolayers high and tens of nanometers in width, exhibit bulklike vibrational and electronic properties.
引用
收藏
页码:165403 / 1
页数:11
相关论文
共 43 条
[1]   SPECTROSCOPIC PROPERTIES OF SEMICONDUCTOR CRYSTALS WITH DIRECT FORBIDDEN ENERGY-GAP [J].
AGEKYAN, VT .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 43 (01) :11-42
[2]   A SURFACE STUDY OF THE OXIDATION OF POLYCRYSTALLINE TIN [J].
ASBURY, DA ;
HOFLUND, GB .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :1132-1135
[3]   Test of structural models for the (4 x 4) phase formed by oxygen adsorption on the Pt3Sn(111) surface [J].
Atrei, A ;
Bardi, U ;
Rovida, G ;
Torrini, M ;
Hoheisel, M ;
Speller, S .
SURFACE SCIENCE, 2003, 526 (1-2) :193-200
[4]   Surface oxygen chemistry of a gas-sensing material:: SnO2(101) [J].
Batzill, M ;
Chaka, AM ;
Diebold, U .
EUROPHYSICS LETTERS, 2004, 65 (01) :61-67
[5]   Structure of monolayer tin oxide films on Pt(111) formed using NO2 as an efficient oxidant -: art. no. 245402 [J].
Batzill, M ;
Beck, DE ;
Koel, BE .
PHYSICAL REVIEW B, 2001, 64 (24)
[6]   Ultrahigh vacuum instrument that combines variable-temperature scanning tunneling microscopy with Fourier transform infrared reflection-absorption spectroscopy for studies of chemical reactions at surfaces [J].
Beck, D ;
Batzill, M ;
Baur, C ;
Kim, J ;
Koel, BE .
REVIEW OF SCIENTIFIC INSTRUMENTS, 2002, 73 (03) :1267-1272
[7]   OBSERVATION OF SURFACE OPTICAL PHONONS ON SNO2(110) [J].
COX, PA ;
EGDELL, RG ;
FLAVELL, WR ;
HELBIG, R .
VACUUM, 1983, 33 (10-1) :835-838
[8]   SURFACE-PROPERTIES OF ANTIMONY DOPED TIN(IV) OXIDE - A STUDY BY ELECTRON-SPECTROSCOPY [J].
COX, PA ;
EGDELL, RG ;
HARDING, C ;
PATTERSON, WR ;
TAVENER, PJ .
SURFACE SCIENCE, 1982, 123 (2-3) :179-203
[9]   Imaging cluster surfaces with atomic resolution:: The strong metal-support interaction state of Pt supported on TiO2(110) [J].
Dulub, O ;
Hebenstreit, W ;
Diebold, U .
PHYSICAL REVIEW LETTERS, 2000, 84 (16) :3646-3649
[10]   OXYGEN DEFICIENT SNO2(110) AND TIO2(110) - A COMPARATIVE-STUDY BY PHOTOEMISSION [J].
EGDELL, RG ;
ERIKSEN, S ;
FLAVELL, WR .
SOLID STATE COMMUNICATIONS, 1986, 60 (10) :835-838