Organometallic chemical vapor deposition of palladium under very mild conditions of temperature in the presence of a low reactive gas partial pressure

Palladium thin-film deposition was carried out from the known precursors Pd(eta(3)-C3H5)-(Cp), and Pd(eta(3)-C3H5)(hfa), where Cp is (eta(5)-C5H5), cyclopentadienyl ligand and hfa is (CF3-COCHCOCF3), hexafluoroacetylacetonato ligand. The use of a reactive gas such as dihydrogen led to unexpected low temperatures of deposition (30-60 degrees C). XPS and electron microprobe analyses revealed that low levels of carbon are incorporated to the palladium films. X-ray analyses showed crystalline deposits and scanning electron microscopy revealed grains of 300-1000 nm. Gas-phase analyses by mass spectrometry and GC/MS of deposition residues were realized to clarify the reaction mechanisms. Such a deposition process leads to metallic palladium with a good purity level.