METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V-SEMICONDUCTORS

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1545

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[3] Andre J. P., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P413

[4] Bunsen R., 1839, LIEBIGS ANN CHEM, V31, P175

[5] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119

[6] CW ROOM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300-A) DIODE-LASERS AT 100 MW [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 937 - 939

[7] BURNHAM RD, J CRYST GROWTH

[8] CASEY HC, 1978, HETEROSTRUCTURE LA A

[9] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[10] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513

[1] Alferov Zh. I., 1968, Fizika i Tekhnika Poluprovodnikov, V2, P1545

[2] ALFEROV ZI, 1969, SOV PHYS SEMICOND+, V2, P1289

[3] Andre J. P., 1981, Gallium Arsenide and Related Compounds, 1980. Eighth International Symposium on Gallium Arsenide and Related Compounds, P413

[4] Bunsen R., 1839, LIEBIGS ANN CHEM, V31, P175

[5] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119

[6] CW ROOM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300-A) DIODE-LASERS AT 100 MW [J]. APPLIED PHYSICS LETTERS, 1983, 42 (11) : 937 - 939

[7] BURNHAM RD, J CRYST GROWTH

[8] CASEY HC, 1978, HETEROSTRUCTURE LA A

[9] HIGH-PURITY GAAS PREPARED FROM TRIMETHYLGALLIUM AND ARSINE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 10 - 23

[10] THE OPTOELECTRONIC PROPERTIES OF DONORS IN ORGANO-METALLIC GROWN ZINC SELENIDE [J]. PHYSICA B & C, 1983, 116 (1-3): : 508 - 513