CW ROOM-TEMPERATURE OPERATION OF GAALAS SINGLE QUANTUM WELL VISIBLE (7300-A) DIODE-LASERS AT 100 MW

被引：23

作者：

BURNHAM, RD

LINDSTROM, C

PAOLI, TL

SCIFRES, DR

STREIFER, W

HOLONYAK, N

机构：

[1] UNIV ILLINOIS,ELECTR ENGN RES LAB,URBANA,IL 61801

[2] UNIV ILLINOIS,MAT RES LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 11期

关键词：

D O I：

10.1063/1.93806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：937 / 939

页数：3

共 19 条

[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (02) : 118 - 119
[2] CW ROOM-TEMPERATURE VISIBLE SINGLE QUANTUM WELL GA0.73AL0.27AS DIODE-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BURNHAM, RD
SCIFRES, DR
STREIFER, W
[J]. ELECTRONICS LETTERS, 1982, 18 (12) : 507 - 509
[3] LOW-THRESHOLD SINGLE QUANTUM WELL (60 A) GAAIAS LASERS GROWN BY MO-CVD WITH MG AS P-TYPE DOPANT
BURNHAM, RD
STREIFER, W
SCIFRES, DR
LINDSTROM, C
PAOLI, TL
HOLONYAK, N
[J]. ELECTRONICS LETTERS, 1982, 18 (25-2) : 1095 - 1097
[4] SHORT-CAVITY SINGLE-MODE 1.3 MU-INGAASP LASERS WITH EVAPORATED HIGH-REFLECTIVITY MIRRORS
BURRUS, CA
LEE, TP
DENTAI, AG
[J]. ELECTRONICS LETTERS, 1981, 17 (25-2) : 954 - 956
[5] DUPUIS RD, 1979, 7TH P INT S GAAS REL, P1
[6] QUANTUM-WELL HETEROSTRUCTURE LASERS
HOLONYAK, N
KOLBAS, RM
DUPUIS, RD
DAPKUS, PD
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 170 - 186
[7] TRANSVERSE-MODE STABILIZED GA1-XALXAS VISIBLE DIODE-LASERS
KAJIMURA, T
KURODA, T
YAMASHITA, S
NAKAMURA, M
UMEDA, J
[J]. APPLIED OPTICS, 1979, 18 (11): : 1812 - 1815
[8] RED-LIGHT-EMITTING LASER-DIODES OPERATING CW AT ROOM-TEMPERATURE
KRESSEL, H
HAWRYLO, FZ
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (10) : 598 - 600
[9] OM-VPE GROWTH OF MG-DOPED GAAS
LEWIS, CR
DIETZE, WT
LUDOWISE, MJ
[J]. ELECTRONICS LETTERS, 1982, 18 (13) : 569 - 570
[10] ONE WATT CW VISIBLE SINGLE-QUANTUM-WELL LASERS
LINDSTROM, C
BURNHAM, RD
SCIFRES, DR
PAOLI, TL
STREIFER, W
[J]. ELECTRONICS LETTERS, 1983, 19 (03) : 80 - 81

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