METALORGANIC CHEMICAL VAPOR-DEPOSITION OF III-V-SEMICONDUCTORS

[11] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[12] DINGLE R, VLSI ELECTRONICS MIC, V8

[13] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[14] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953

[15] DUETSCH TF, 1979, APPL PHYS LETT, V35, P175

[16] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[17] DUPUIS RD, 1980, JPN J APPL PHYS, V19, P415, DOI 10.7567/JJAPS.19S1.415

[18] FACET-COATED GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS HAVING LOW DEGRADATION RATES ()1-PERCENT/KH) AT 70-DEGREES-C [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 286 - 288

[19] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[20] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841

[11] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[12] DINGLE R, VLSI ELECTRONICS MIC, V8

[13] DINGLE R, 1975, ADV SOLID STATE PHYS, V15, P21

[14] EXCIMER LASER-INDUCED DEPOSITION OF INP AND INDIUM-OXIDE FILMS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (10) : 951 - 953

[15] DUETSCH TF, 1979, APPL PHYS LETT, V35, P175

[16] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[17] DUPUIS RD, 1980, JPN J APPL PHYS, V19, P415, DOI 10.7567/JJAPS.19S1.415

[18] FACET-COATED GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS HAVING LOW DEGRADATION RATES ()1-PERCENT/KH) AT 70-DEGREES-C [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (08) : 286 - 288

[19] HIGH-EFFICIENCY GAALAS-GAAS HETEROSTRUCTURE SOLAR-CELLS GROWN BY METALLO-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (03) : 201 - 203

[20] GA(1-X)ALXAS-GA(1-Y)ALYAS DOUBLE-HETEROSTRUCTURE ROOM TEMPERATURE LASERS GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (12) : 839 - 841