FACET-COATED GRADED-INDEX SEPARATE-CONFINEMENT-HETEROSTRUCTURE SINGLE-QUANTUM-WELL LASERS HAVING LOW DEGRADATION RATES ()1-PERCENT/KH) AT 70-DEGREES-C

被引：14

作者：

DUPUIS, RD

HARTMAN, RL

NASH, FR

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1983年 / 4卷 / 08期

关键词：

D O I：

10.1109/EDL.1983.25735

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：286 / 288

页数：3

共 19 条

[1] CURRENT THRESHOLD UNIFORMITY OF SHALLOW PROTON STRIPE GAALAS DOUBLE HETEROSTRUCTURE LASERS GROWN BY METALORGANIC-CHEMICAL VAPOR-DEPOSITION [J].

BURNHAM, RD ;

SCIFRES, DR ;

STREIFER, W .

APPLIED PHYSICS LETTERS, 1982, 40 (02) :118-119

[2] (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS - COMPARISON OF DEVICES FABRICATED WITH DEEP AND SHALLOW PROTON-BOMBARDMENT [J].

DIXON, RW ;

JOYCE, WB .

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[3]

DUPUIS RD, 1980, JPN J APPL PHYS, V19, P415, DOI 10.7567/JJAPS.19S1.415

[4] 700-H CONTINUOUS ROOM-TEMPERATURE OPERATION OF ALXGA1-XAS-GAAS HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD .

APPLIED PHYSICS LETTERS, 1979, 35 (04) :311-314

[5] ROOM-TEMPERATURE LASER OPERATION OF QUANTUM-WELL GA(1-X)ALXAS-GAAS LASER-DIODES GROWN BY ORGANOMETALLUIC CHEMICAL VAPOR-DEPOSITION [J].

DUPUIS, RD ;

DAPKUS, PD ;

HOLONYAK, N ;

REZEK, EA ;

CHIN, R .

APPLIED PHYSICS LETTERS, 1978, 32 (05) :295-297

[6] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS [J].

HARTMAN, RL ;

SCHUMAKER, NE ;

DIXON, RW .

APPLIED PHYSICS LETTERS, 1977, 31 (11) :756-759

[7]

HARTMAN RL, 1982, 8TH P EUR C OPT COMM

[8]

HARTMAN RL, 1975, APPL PHYS LETT, V26, P236

[9] FACET DEGRADATIONS IN GA1-XALXAS-GA1-YALYAS DOUBLE-HETEROSTRUCTURE LASERS [J].

HAYAKAWA, T ;

YAMAMOTO, S ;

SAKURAI, T ;

HIJIKATA, T .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (10) :6068-6073

[10] LOW-THRESHOLD GRIN-SCH GAAS/GAALAS LASER STRUCTURE GROWN BY OM VPE [J].

HERSEE, S ;

BALDY, M ;

ASSENAT, P ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1982, 18 (14) :618-620

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