FACET DEGRADATIONS IN GA1-XALXAS-GA1-YALYAS DOUBLE-HETEROSTRUCTURE LASERS

被引：13

作者：

HAYAKAWA, T

YAMAMOTO, S

SAKURAI, T

HIJIKATA, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1981年 / 52卷 / 10期

关键词：

D O I：

10.1063/1.328545

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：6068 / 6073

页数：6

相关论文

共 17 条

[1] ANODIC OXIDE ON GAAS - QUANTITATIVE CHEMICAL DEPTH PROFILES OBTAINED USING AUGER-SPECTROSCOPY AND NEUTRON-ACTIVATION ANALYSIS
CHANG, CC
SCHWARTZ, B
MURARKA, SP
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) : 922 - 926
[2] PHYSICAL-PROPERTIES OF PLASMA-GROWN GAAS OXIDES
CHANG, RPH
POLAK, AJ
ALLARA, DL
CHANG, CC
LANFORD, WA
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1979, 16 (03): : 888 - 895
[3] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON
DEAL, BE
GROVE, AS
[J]. JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) : 3770 - &
[4] STATISTICAL STUDY OF THE RELIABILITY OF OXIDE-DEFINED STRIPE CW LASERS OF (ALGA)AS
ETTENBERG, M
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (03) : 1195 - 1202
[5] CONTINUOUSLY OPERATED (AL,GA)AS DOUBLE-HETEROSTRUCTURE LASERS WITH 70-DEGREES-C LIFETIMES AS LONG AS 2 YEARS
HARTMAN, RL
SCHUMAKER, NE
DIXON, RW
[J]. APPLIED PHYSICS LETTERS, 1977, 31 (11) : 756 - 759
[6] DEGRADATION MECHANISMS OF GA1-XALX AS VISIBLE DIODE-LASERS
KAJIMURA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (02) : 908 - 913
[7] AL2O3 HALF-WAVE FILMS FOR LONG-LIFE CW LASERS
LADANY, I
ETTENBERG, M
LOCKWOOD, HF
KRESSEL, H
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (02) : 87 - 88
[8] STABILIZATION OF AGING-INDUCED SELF-PULSATIONS AND THE ELIMINATION OF AN INITIAL TEMPORALLY SATURABLE MODE OF DEGRADATION IN (AL,GA)AS LASERS BY MEANS OF FACET COATINGS
NASH, FR
HARTMAN, RL
PAOLI, TL
DIXON, RW
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (12) : 905 - 907
[9] FACET OXIDE FORMATION AND DEGRADATION OF GAAS-LASERS
NASH, FR
HARTMAN, RL
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3133 - 3141
[10] GAAS-LASER RELIABILITY AND PROTECTIVE FACET COATINGS
NASH, FR
HARTMAN, RL
DENKIN, NM
DIXON, RW
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3122 - 3132