High field flashover strength of intrinsic gallium nitride and aluminum nitride in vacuum

被引：1

作者：

Khan, MA

Chen, O

Sudarshan, TS

Gradinaru, G

机构：

[1] APA INC,APA OPT,BLAINE,MN 55449

[2] UNIV S CAROLINA,DEPT ELECT & COMP ENGN,COLUMBIA,SC 29208

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 02期

关键词：

D O I：

10.1063/1.117941

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The behavior of intrinsic materials (i-GaN and i-AlN) at high fields and room temperature, using small gap lateral test devices in vacuum ambient, is analyzed. Unprecedented hold-off fields of more than 375 kV/cm were obtained for intrinsic nitride layers grown on sapphire. The superior high field performance of intrinsic nitride materials indicate a great potential of nitride semiconductors for the next generation high power/high voltage/high frequency/high temperature electronic devices. (C) 1995 American Institute of Physics.

引用

页码：254 / 256

页数：3

共 17 条

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