Preparation of Pt thin films deposited by metalorganic chemical vapor deposition for ferroelectric thin films

被引：32

作者：

Kwon, JH

Yoon, SG

机构：

[1] Dept. of Materials Engineering, Chungnam National University, Daeduk Science Town, Taejon

来源：

THIN SOLID FILMS | 1997年 / 303卷 / 1-2期

关键词：

Auger electron spectroscopy (AES); chemical vapour deposition (CVD); organometallic vapour deposition; scanning electron microscopy;

D O I：

10.1016/S0040-6090(97)00003-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pure platinum films were deposited onto SiO2(100 nm)/Si using MeCpPtMe3 and oxygen by metalorganic chemical vapor deposition (MOCVD). Platinum deposition was controlled by gas phase mass transfer with an apparent activation energy of 2.2 kcal mol(-1) within the temperature range of 300-450 degrees C. Film formation greatly depended on the nucleation and the growth rate according to the deposition temperatures. The deposition at 450 degrees C was mainly controlled by the growth rate and at 350 degrees C was governed by the nucleation rate. Holes formed on Pt films deposited at 350 degrees C were affected by the variation of oxygen flow rates. Holes within the films increased the film resistivity, MOCVD-Pt showed an excellent step coverage and a smooth and stable state after deposition of BST at 600 degrees C. (C) 1997 Elsevier Science S.A.

引用

页码：136 / 142

页数：7

共 10 条

[1]

GHATE PD, 1982, MATER RES SOC S P, V10, P371

[2] CHEMICAL VAPOR-DEPOSITION OF METALS FOR INTEGRATED-CIRCUIT APPLICATIONS [J].