Fully integrated power supply design for wireless biomedical implants

被引:11
作者
Ghovanloo, M [1 ]
Najafi, K [1 ]
机构
[1] Univ Michigan, Ctr Wireless Integrated Microsyst, Ann Arbor, MI 48109 USA
来源
2ND ANNUAL INTERNATIONAL IEEE-EMBS SPECIAL TOPIC CONFERENCE ON MICROTECHNOLOGIES IN MEDICINE & BIOLOGY, PROCEEDINGS | 2002年
关键词
rectifiers; implants; wireless; RF; power supply;
D O I
10.1109/MMB.2002.1002359
中图分类号
Q5 [生物化学];
学科分类号
071010 ; 081704 ;
摘要
This paper describes implementation of several fully integrated on-chip rectifier designs in BiCMOS technology for rectifying the externally generated RF magnetic power and data carrier signal in wireless biomedical implants to generate an unregulated DC supply. It also presents application of these rectifiers in an integrated dual +/-5V output supply capable of providing up to 50mW for wireless biomedical implants. New full-wave rectifier topologies and low power circuit design techniques have been employed to decrease substrate leakage current and parasitic components, reduce the possibility of latch-up, and improve power transfer efficiency and high frequency performance of the rectifier block. These circuits have been designed to be used in a wireless neural stimulating microsystem and fabricated in the University of Michigan's single-metal, dual-poly 3-mum BiCMOS process. The rectifier areas are in the range of 0.12 to 0.48mm(2) and they are capable of delivering more than 100mW from the receiver coil to the regulator circuitry. The performance of all rectifier designs has been tested and compared using up to 4MHz carrier.
引用
收藏
页码:414 / 419
页数:6
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