On the Origin of Contact Resistances of Organic Thin Film Transistors

被引：111

作者：

Marinkovic, Marko ^{[1
]}

Belaineh, Dagmawi ^{[1
]}

Wagner, Veit ^{[1
]}

Knipp, Dietmar ^{[1
]}

机构：

[1] Jacobs Univ Bremen, Res Ctr Funct Mat & Nanomol Sci, D-28759 Bremen, Germany

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 29期

关键词：

ELECTRONIC TRANSPORT; PENTACENE; MORPHOLOGY; DIELECTRICS; POLYMER; METAL; SIZE;

D O I：

10.1002/adma.201201311

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A model is presented that describes the gate-voltage-dependent contact resistance and channel-length-dependent charge carrier mobility of small-molecule-based organic thin-film transistors in top and bottom drain/source contact configuration. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：4005 / 4009

页数：5

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