Positive flatband voltage shift in MOS capacitors on n-type GaN

被引：54

作者：

Matocha, K ^{[1
]}

Chow, TP ^{[1
]}

Gutmann, RJ ^{[1
]}

机构：

[1] Rensselaer Polytech Inst, Ctr Integrated Elect, Troy, NY 12180 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2002年 / 23卷 / 02期

基金：

美国国家科学基金会;

关键词：

gallium nitride; MOS capacitors; polarization; pyroelectricity; pyroelectric devices;

D O I：

10.1109/55.981312

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaN MOS capacitors were fabricated using silicon dioxide deposited by low-pressure chemical vapor deposition oxide at 900 degreesC. The MOS capacitor flatband voltage shift versus temperature was used to determine a pyroelectric charge coefficient of 3.7 x 10(9) q/cm(2)-K, corresponding to a pyroelectric voltage coefficient of 7.0 X 10(4) V/m-K.

引用

页码：79 / 81

页数：3

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