Pyroelectric properties of AlN

被引：72

作者：

Fuflyigin, V ^{[1
]}

Salley, E ^{[1
]}

Osinsky, A ^{[1
]}

Norris, P ^{[1
]}

机构：

[1] Corning Appl Technol, Woburn, MA 01801 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 19期

关键词：

D O I：

10.1063/1.1324726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pyroelectric properties of high-quality (0001)AlN films grown on (111) Si were studied. The pyroelectric coefficient p was measured using the dynamic method. The value was in the range of 6-8 muC/(m(2) K), yielding a p/epsilon figure-of-merit of 0.8-0.95. The pyroelectric coefficient was independent of temperature and applied bias. Leakage current as low as 1-2x10(-9) A/cm(2) was measured at 5 V on large area devices. The obtained results indicate that AlN films can be used in pyroelectric thin-film devices. (C) 2000 American Institute of Physics. [S0003-6951(00)05045-2].

引用

页码：3075 / 3077

页数：3

共 8 条

[1] INFRARED LATTICE VIBRATION OF VAPOUR-GROWN AIN [J].