Hydrothermal and electrochemical growth of complex oxide thin films for electronic devices

被引：14

作者：

Kajiyoshi, K

Yanagisawa, K

Yoshimura, M

机构：

[1] Kochi Univ, Res Lab Hydrothermal Chem, Fac Sci, Kochi 7808520, Japan

[2] Tokyo Inst Technol, Ctr Mat Design, Mat & Struct Lab, Yokohama, Kanagawa 2268503, Japan

来源：

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY | 2006年 / 26卷 / 4-5期

关键词：

films; dielectric properties; BaTiO3 and titanates; tantalates; niobates;

D O I：

10.1016/j.jeurceramsoc.2005.07.022

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Thin film growth of complex oxides including BaTiO3, SrTiO3, BaZrO3, SrZrO3. KTaO3, and KNbO3 were studied by the hydrothermal and the hydrothermal-electrochemical methods. Hydrothermal-electrochemical growth of ATiO(3) (A = Ba, Sr) thin films was investigated at temperatures from 100 to 200 degrees C using a three-electrode cell. Current efficiency for the film growth was in the range from ca. 0.6 to 3.0%. Tracer experiments revealed that the ATiO(3) film grows at the film/substrate interface. Thin films of AZrO(3) (A = Ba, Sr) were also prepared oil Zr metal substrates by the hydrothermal-electrochemical method. By applying a potential above ca. +2 V versus Ag/AgCl to the Zr substrates, AZrO(3) thin films were formed uniformly. Thin films of KTaO3 and KNbO3 were prepared on Ta metal substrates by the hydrothermal method. Perovskite-type KTaO3 thin films were formed in 2.0 M KOH at 300 degrees C. Pyrochlore-type K2Ta2O6 thin films were formed at lower temperatures and lower KOH concentrations. (c) 2005 Elsevier Ltd. All rights reserved.

引用

页码：605 / 611

页数：7