Point defects in sputtered NiO films

被引：148

作者：

Jang, Wei-Luen ^{[1
]}

Lu, Yang-Ming ^{[2
]}

Hwang, Weng-Sing ^{[1
]}

Hsiung, Tung-Li ^{[3
]}

Wang, H. Paul ^{[3
]}

机构：

[1] Natl Cheng Kung Univ, Dept Mat Sci & Engn, Tainan 70101, Taiwan

[2] Natl Univ Tainan, Grad Inst Electroopt Engn, Tainan 70005, Taiwan

[3] Natl Cheng Kung Univ, Dept Environm Engn, Tainan 70101, Taiwan

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 06期

关键词：

annealing; electrical conductivity; nickel compounds; point defects; semiconductor thin films; sputter deposition; stoichiometry; vacancies (crystal); OXIDE THIN-FILMS; RAY-ABSORPTION-SPECTROSCOPY; HEAT-TREATMENT;

D O I：

10.1063/1.3081025

中图分类号：

O59 [应用物理学];

学科分类号：

070305 [高分子化学与物理];

摘要：

The dominant point defects in p-type NiO films were determined by analyzing the coordination number (CN) change with various annealing temperatures and the composition profile of double-layer films deposited individually in oxygen and in argon atmospheres. The results show that the nonstoichiometry of sputtered NiO film is determined by the number of nickel atoms rather than by the number of oxygen atoms. It is concluded that nickel vacancies are the dominant point defects that result in the electrical conductivity of NiO films.

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页数：3

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