共 6 条
- [3] Quantitative two-dimensional dopant profiling of abrupt dopant profiles by cross-sectional scanning capacitance microscopy [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1996, 14 (03): : 1168 - 1171
- [4] Scanning capacitance microscopy measurements and modeling: Progress towards dopant profiling of silicon [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (01): : 242 - 247
- [6] Imaging mechanism and effects of adsorbed water in contact-type scanning capacitance microscopy [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1996, 14 (02): : 887 - 891