Topography dependent doping distribution in selectively regrown InP studied by scanning capacitance microscopy

被引：23

作者：

Hammar, M ^{[1
]}

Messmer, ER ^{[1
]}

Luzuy, M ^{[1
]}

Anand, S ^{[1
]}

Lourdudoss, S ^{[1
]}

Landgren, G ^{[1
]}

机构：

[1] Royal Inst Technol, Dept Elect, Lab Semicond Mat, S-16440 Kista, Sweden

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 07期

关键词：

D O I：

10.1063/1.120902

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have used scanning capacitance microscopy (SCM) to study the dopant distribution in regrown InP with high sensitivity and spatial resolution. Sulfur or iron doped InP was selectively regrown around n-doped InP mesas using hydride vapor phase epitaxy, and the resulting structure was imaged in cross section by SCM. For calibration purposes, reference layers with known doping levels were grown directly on top of the region of interest. Dramatic variations in the carrier concentration around the mesa, as well as pronounced differences in the behavior of S and Fe are observed. We correlate these findings to the growth and doping incorporation mechanisms. (C) 1998 American Institute of Physics.

引用

页码：815 / 817

页数：3

共 11 条

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