TEMPORALLY RESOLVED REGROWTH OF INP

Temporally resolved regrowth of InP around reactive ion etched striped mesas without mask is reported. The regrowth was carried out at the growth temperatures of 600, 650, 685 and 700 degrees C in a near equilibrium process, Hydride vapour phase epitaxy (HVPE). The mesa orientations considered were [110] and [($) over bar 110]. The regrowth profiles, initial lateral growth and evolution of certain crystallographic planes are analysed. The regrowth profiles and initial lateral growth rates are dependent on temperature and mesa orientation. The differences are explained by invoking the bonding configurations existing on the mesa walls under the epitaxial growth conditions of excess phosphorus pressure. The facility of lateral growth especially in the [($) over bar 110] mesa case is explained by a more favourable net reduction of dangling bonds. The emerging crystallographic planes are identified as {hhl}. Initially the planes with l/h less than or equal to 3 are formed but progress towards l/h greater than or equal to 3. The implication of a very high lateral growth rate in utilising regrowth for device fabrication is also mentioned.