ORIENTATION DEPENDENT GROWTH-BEHAVIOR DURING HYDRIDE VPE REGROWTH OF INP-FE AROUND REACTIVE ION ETCHED MESAS

An investigation on the hydride vapour phase epitaxy (HVPE) growth of SI-InP:Fe on patterned surfaces indicates that iron incorporation does not always synchronize with the rate of growth. This is especially true in certain crystallographic directions, e.g., <1, -1, 0> where the growth rate is high. This phenomenon has been attributed to the local chemistry which limits the availability of iron or to a simple kinetically limited supply of iron when the growth rate is high. However, it is shown that by a two step procedure such a synchronization can be achieved. The proposed procedure which is applicable to reactive ion etched vertical mesas is tested on a laser mesa and the surrounding SI-InP:Fe is found to provide good current confinement and high modulation performance.