TEMPORALLY RESOLVED GROWTH HABIT STUDIES OF INP/(INGA)AS HETEROSTRUCTURES GROWN BY MOCVD ON CONTOURED INP SUBSTRATES

被引：44

作者：

GARRETT, B

THRUSH, EJ

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1989年 / 97卷 / 02期

关键词：

D O I：

10.1016/0022-0248(89)90208-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：273 / 284

页数：12

共 11 条

[1] CHEMICAL ETCHING OF INGAASP/INP DH WAFER [J].

ADACHI, S ;

NOGUCHI, Y ;

KAWAGUCHI, H .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1053-1062

[2] MOCVD OF INP AND MASS-TRANSPORT ON STRUCTURED INP SUBSTRATES [J].

BLAAUW, C ;

SZAPLONCZAY, A ;

FOX, K ;

EMMERSTORFER, B .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :326-333

[3] GROWTH-BEHAVIOR DURING NONPLANAR METALORGANIC VAPOR-PHASE EPITAXY [J].

DEMEESTER, P ;

VANDAELE, P ;

BAETS, R .

JOURNAL OF APPLIED PHYSICS, 1988, 63 (07) :2284-2290

[4] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS [J].

GATOS, HC ;

LAVINE, MC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) :427-433

[5] A STUDY OF THE ORIENTATION DEPENDENCE OF GA(AL)AS GROWTH BY MOVPE [J].

HERSEE, SD ;

BARBIER, E ;

BLONDEAU, R .

JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) :310-320

[6]

SANGSTER RC, 1962, COMPOUND SEMICONDUCT, V1, P239

[7] CODE - A NOVEL MOVPE TECHNIQUE FOR THE SINGLE STAGE GROWTH OF BURIED RIDGE DOUBLE HETEROSTRUCTURE LASERS AND WAVE-GUIDES [J].

SCOTT, MD ;

RIFFAT, JR ;

GRIFFITH, I ;

DAVIES, JI ;

MARSHALL, AC .

JOURNAL OF CRYSTAL GROWTH, 1988, 93 (1-4) :820-824

[8] HIGH-QUALITY MOLECULAR-BEAM EPITAXIAL-GROWTH ON PATTERNED GAAS SUBSTRATES [J].

SMITH, JS ;

DERRY, PL ;

MARGALIT, S ;

YARIV, A .

APPLIED PHYSICS LETTERS, 1985, 47 (07) :712-715

[9]

Thrush E. J., 1987, Chemtronics, V2, P62

[10] LPE GROWTH ON STRUCTURED [100] INP SUBSTRATES AND THEIR FABRICATION BY PREFERENTIAL ETCHING [J].

TURLEY, SEH ;

GREENE, PD .

JOURNAL OF CRYSTAL GROWTH, 1982, 58 (02) :409-416

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