CODE - A NOVEL MOVPE TECHNIQUE FOR THE SINGLE STAGE GROWTH OF BURIED RIDGE DOUBLE HETEROSTRUCTURE LASERS AND WAVE-GUIDES

被引：30

作者：

SCOTT, MD

RIFFAT, JR

GRIFFITH, I

DAVIES, JI

MARSHALL, AC

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 93卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(88)90625-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：820 / 824

页数：5

共 15 条

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[2]

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[3] IMPROVEMENTS IN THE STRUCTURAL QUALITY OF AL0.48IN0.52AS GROWN BY LOW-PRESSURE METAL ORGANIC VAPOR-PHASE EPITAXY [J].

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[4]

HIMURA K, 1985, APPL PHYS LETT, V47, P186

[5] LOW-THRESHOLD OPERATION OF 1.5 MU-M BURIED-HETEROSTRUCTURE DFB LASERS GROWN ENTIRELY BY LOW-PRESSURE MOVPE [J].

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ELECTRONICS LETTERS, 1987, 23 (05) :193-194

[6] LOW-LOSS GAINASP BURIED-HETEROSTRUCTURE OPTICAL-WAVEGUIDE BRANCHES AND BENDS [J].

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[7] IMPROVED HIGH-TEMPERATURE PERFORMANCE OF 1.52 MU-M INGAASP LASER-DIODES FABRICATED BY 2-STEP VPE AND LPE [J].

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ELECTRONICS LETTERS, 1985, 21 (07) :293-295

[8] HIGH-POWER, LOW-THRESHOLD BH LASERS OPERATING AT 1.52-MUM GROWN ENTIRELY BY MOVPE [J].

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ELECTRONICS LETTERS, 1985, 21 (20) :888-889

[9] HIGH-PERFORMANCE DC-PBH LASERS AT 1.52 MU-M BY A HYBRID MOVPE LPE PROCESS [J].

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[10] OPTICAL WAVE-GUIDES IN IN0.52AL0.48AS GROWN ON INP BY MBE [J].

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ELECTRONICS LETTERS, 1986, 22 (20) :1066-1068

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