IMPROVED HIGH-TEMPERATURE PERFORMANCE OF 1.52 MU-M INGAASP LASER-DIODES FABRICATED BY 2-STEP VPE AND LPE

被引：10

作者：

KATO, Y

YANASE, T

KITAMURA, M

NISHI, K

YAMAGUCHI, M

NISHIMOTO, H

MITO, I

LANG, R

机构：

[1] NEC, Opto-Electronics Research Lab,, Kawasaki, Jpn, NEC, Opto-Electronics Research Lab, Kawasaki, Jpn

来源：

ELECTRONICS LETTERS | 1985年 / 21卷 / 07期

关键词：

D O I：

10.1049/el:19850210

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：293 / 295

页数：3

共 9 条

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[8] VPE-GROWN 1.3 MU-M INGAASP/INP DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH LPE-BURYING LAYERS [J].

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[9] 1.3 MU-M INGAASP/INP MULTIQUANTUM-WELL LASERS GROWN BY VAPOR-PHASE EPITAXY [J].

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ELECTRONICS LETTERS, 1983, 19 (17) :700-701

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