VPE-GROWN 1.3 MU-M INGAASP/INP DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH LPE-BURYING LAYERS

被引：7

作者：

YANASE, T ^{[1
]}

KATO, Y ^{[1
]}

MITO, I ^{[1
]}

KOBAYASHI, K ^{[1
]}

NISHIMOTO, H ^{[1
]}

USUI, A ^{[1
]}

KOBAYASHI, K ^{[1
]}

机构：

[1] NEC CORP,BASIC RES LABS,MIYAMAE KU,KAWASAKI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 07期

关键词：

D O I：

10.1143/JJAP.22.L415

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L415 / L416

页数：2

共 6 条

[1] HYDRIDE MULTIBARREL REACTORS SUITABLE FOR MICROWAVE AND OPTOELECTRONIC (GA,IN)(AS,P) HETEROSTRUCTURE GROWTH [J].

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JOURNAL OF CRYSTAL GROWTH, 1982, 57 (02) :379-386

[2]

HIRTS JP, 1981, ELECTRON LETT, V17, P114

[3] DOUBLE-CHANNEL PLANAR BURIED-HETEROSTRUCTURE LASER DIODE WITH EFFECTIVE CURRENT CONFINEMENT [J].

MITO, I ;

KITAMURA, M ;

KOBAYASHI, K ;

KOBAYASHI, K .

ELECTRONICS LETTERS, 1982, 18 (22) :953-954

[4] VAPOR-PHASE GROWTH OF INGAASP-INP DH STRUCTURES BY THE DUAL-GROWTH-CHAMBER METHOD [J].

MIZUTANI, T ;

YOSHIDA, M ;

USUI, A ;

WATANABE, H ;

YUASA, T ;

HAYASHI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :L113-L116

[5] LOW-THRESHOLD 1.25-MU-M VAPOR-GROWN INGAASP CW LASERS [J].

OLSEN, GH ;

NUESE, CJ ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1979, 34 (04) :262-264

[6]

USHI A, 1981 P INT S GAAS RE, P137

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