MOCVD OF INP AND MASS-TRANSPORT ON STRUCTURED INP SUBSTRATES

被引：41

作者：

BLAAUW, C

SZAPLONCZAY, A

FOX, K

EMMERSTORFER, B

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90319-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：326 / 333

页数：8

共 8 条

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[5] LOW THRESHOLD GAINASP-INP BURIED-HETEROSTRUCTURE LASERS WITH A CHEMICALLY ETCHED AND MASS-TRANSPORTED MIRROR [J].

LIAU, ZL ;

WALPOLE, JN ;

TSANG, DZ .

APPLIED PHYSICS LETTERS, 1984, 44 (10) :945-947

[6] A NOVEL TECHNIQUE FOR GALNASP/INP BURIED HETEROSTRUCTURE LASER FABRICATION [J].

LIAU, ZL ;

WALPOLE, JN .

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[7]

LIAU ZL, 1982, TOPICAL M INTEGRATED

[8] LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY OF INP IN A VERTICAL REACTOR [J].

OISHI, M ;

KUROIWA, K .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (05) :1209-1214

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