LOW THRESHOLD GAINASP-INP BURIED-HETEROSTRUCTURE LASERS WITH A CHEMICALLY ETCHED AND MASS-TRANSPORTED MIRROR

被引：17

作者：

LIAU, ZL

WALPOLE, JN

TSANG, DZ

机构：

来源：

APPLIED PHYSICS LETTERS | 1984年 / 44卷 / 10期

关键词：

D O I：

10.1063/1.94606

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：945 / 947

页数：3

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