ON THE FORMATION OF PLANAR-ETCHED FACETS IN GAINASP INP DOUBLE HETEROSTRUCTURES

被引：36

作者：

COLDREN, LA

FURUYA, K

MILLER, BI

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 09期

关键词：

D O I：

10.1149/1.2120124

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1918 / 1926

页数：9

共 33 条

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[10] COMBINED DRY AND WET ETCHING TECHNIQUES TO FORM PLANAR (011) FACETS IN GAINASP-INP DOUBLE HETEROSTRUCTURES [J].

COLDREN, LA ;

FURUYA, K ;

MILLER, BI ;

RENTSCHLER, JA .

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