LPE GROWTH ON STRUCTURED [100] INP SUBSTRATES AND THEIR FABRICATION BY PREFERENTIAL ETCHING

被引：30

作者：

TURLEY, SEH

GREENE, PD

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1982年 / 58卷 / 02期

关键词：

D O I：

10.1016/0022-0248(82)90289-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：409 / 416

页数：8

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共 22 条

[1] CHEMICAL ETCHING CHARACTERISTICS OF (001)INP
ADACHI, S
KAWAGUCHI, H
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (06) : 1342 - 1349
[2] BARRIER-FREE CONTACTS ON INDIUM PHOSPHIDE
BECKER, R
[J]. SOLID-STATE ELECTRONICS, 1973, 16 (11) : 1241 - 1249
[3] CONSTRICTED DOUBLE-HETEROSTRUCTURE (ALGA)AS DIODE-LASERS
BOTEZ, D
ZORY, P
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (04) : 261 - 263
[4] GROWTH-CHARACTERISTICS OF GAAS-GA1-XALXAS STRUCTURES FABRICATED BY LIQUID-PHASE EPITAXY OVER PREFERENTIALLY ETCHED CHANNELS
BOTEZ, D
TSANG, WT
WANG, S
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (04) : 234 - 237
[5] ETCHED BURIED HETEROSTRUCTURE GAAS-GAALAS INJECTION LASERS
BURNHAM, RD
SCIFRES, DR
[J]. APPLIED PHYSICS LETTERS, 1975, 27 (09) : 510 - 511
[6] SELECTIVELY ETCHED DIFFRACTION GRATINGS IN GAAS
COMERFORD, L
ZORY, P
[J]. APPLIED PHYSICS LETTERS, 1974, 25 (04) : 208 - 210
[7] CHARACTERISTICS OF THE (111) SURFACES OF THE III-V INTERMETALLIC COMPOUNDS
GATOS, HC
LAVINE, MC
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1960, 107 (05) : 427 - 433
[8] CHEMICAL ETCHING OF INP AND GAINASP FOR FABRICATING LASER-DIODES AND INTEGRATED OPTICAL CIRCUITS
KAMBAYASH, T
KITAHARA, C
IGA, K
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (01) : 79 - 85
[9] CHANNELED SUBSTRATE BURIED HETEROSTRUCTURE GAAS-(GAAL)AS INJECTION-LASERS
KIRKBY, PA
THOMPSON, GHB
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (10) : 4578 - 4589
[10] FABRICATION AND LASING PROPERTIES OF MESA SUBSTRATE BURIED HETEROSTRUCTURE GAINASP-INP LASERS AT 1.3 MU-M WAVELENGTH
KISHINO, K
SUEMATSU, Y
TAKAHASHI, Y
TANBUNEK, T
ITAYA, Y
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) : 160 - 164