REGROWTH OF SEMI-INSULATING INP AROUND ETCHED MESAS USING HYDRIDE VAPOR-PHASE EPITAXY

Hydride vapor phase epitaxy has been used to regrow semi-insulating InP around a variety of etched mesa structures used for the fabrication of buried heterostructure devices. Morphological properties of regrowth using this technique include excellent mesa sidewall coverage, no void formation, no mask overgrowth, and good surface morphology in the field regions between mesas. The regrowth morphology is relatively insensitive to parameters such as mesa sidewall shape and the extent of the etch mask overhang. The most striking feature of this hydride regrowth technique is that it is possible to grow very thick (>10 µm) layers without any mask overgrowth, and the resulting morphology in the vicinity of the regrown mesa is well suited for subsequent device processing. © 1990, The Electrochemical Society, Inc. All rights reserved.