THE GROWTH OF IRON DOPED SEMI-INSULATING INP BY HYDRIDE VAPOR-PHASE EPITAXY IN A NITROGEN AMBIENT

被引：17

作者：

KARLICEK, RF

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(88)90363-6

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：33 / 38

页数：6

共 12 条

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[8] ELECTRICAL CHARACTERIZATION OF FE-DOPED SEMI-INSULATING INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

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[9] GROWTH OF IRON-DOPED EPITAXIAL LAYERS FOR GAAS FIELD-EFFECT TRANSISTORS [J].

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