PLANAR-EMBEDDED INGAASP/INP HETEROSTRUCTURE LASER WITH A SEMIINSULATING INP CURRENT-BLOCKING LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：38

作者：

SANADA, T

NAKAI, K

WAKAO, K

KUNO, M

YAMAKOSHI, S

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 14期

关键词：

D O I：

10.1063/1.98789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1054 / 1056

页数：3

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[1] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS
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[6] INGAASP PLANAR BURIED HETEROSTRUCTURE LASER DIODE (PBH-LD) WITH VERY LOW THRESHOLD CURRENT
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[7] NAKAI K, UNPUB
[8] HIGH-POWER, LOW-THRESHOLD BH LASERS OPERATING AT 1.52-MUM GROWN ENTIRELY BY MOVPE
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[9] CW ELECTROOPTICAL PROPERTIES OF INGAASP (LAMBDA = 1.3 MU-M) BURIED-HETEROSTRUCTURE LASERS
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 202 - 207
[10] SEMI-INSULATOR-EMBEDDED INGAASP/INP FLAT-SURFACE BURIED HETEROSTRUCTURE LASER
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[J]. APPLIED PHYSICS LETTERS, 1985, 47 (11) : 1127 - 1129