MOVPE STUDIES FOR THE DEVELOPMENT OF GAINASP-INP LASERS WITH SEMIINSULATING INP BLOCKING LAYERS

被引：10

作者：

SPEIER, P

WUNSTEL, K

TEGUDE, FJ

机构：

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 25期

关键词：

D O I：

10.1049/el:19870941

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1363 / 1365

页数：3

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