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ORIENTATION DEPENDENT PARA-TYPE CONVERSION OF FE-INP IN HYDRIDE VPE REGROWN EMBH LASERS
被引:6
作者
:
JOHNSON, BC
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
JOHNSON, BC
[
1
]
BRIDGES, TJ
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
BRIDGES, TJ
[
1
]
STORZ, FG
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T BELL LABS,HOLMDEL,NJ 07733
AT&T BELL LABS,HOLMDEL,NJ 07733
STORZ, FG
[
1
]
机构
:
[1]
AT&T BELL LABS,HOLMDEL,NJ 07733
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1989年
/ 18卷
/ 06期
关键词
:
D O I
:
10.1007/BF02657524
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:717 / 720
页数:4
相关论文
共 9 条
[1]
BRIDGES TE, IN PRESS
[2]
FLYNN EJ, 1988, 11 IEEE INT SEM LAS, P216
[3]
FURTHER EVIDENCE OF CHROMIUM, MANGANESE, IRON, AND ZINC REDISTRIBUTION IN INDIUM-PHOSPHIDE AFTER ANNEALING
[J].
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
GAUNEAU, M
;
CHAPLAIN, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CHAPLAIN, R
;
RUPERT, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
RUPERT, A
;
RAO, EVK
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
RAO, EVK
;
DUHAMEL, N
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
DUHAMEL, N
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(04)
:1029
-1035
[4]
THE GROWTH OF IRON DOPED SEMI-INSULATING INP BY HYDRIDE VAPOR-PHASE EPITAXY IN A NITROGEN AMBIENT
[J].
KARLICEK, RF
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
KARLICEK, RF
.
JOURNAL OF CRYSTAL GROWTH,
1988,
91
(1-2)
:33
-38
[5]
REPRODUCIBLE LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP BURIED HETEROSTRUCTURE LASERS
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
BLAHA, JP
论文数:
0
引用数:
0
h-index:
0
BLAHA, JP
;
STREGE, KE
论文数:
0
引用数:
0
h-index:
0
STREGE, KE
.
APPLIED PHYSICS LETTERS,
1987,
51
(18)
:1407
-1409
[6]
GAINASP-INP BURIED HETEROSTRUCTURE FORMATION BY LIQUID-PHASE EPITAXY
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
LOGAN, RA
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
TEMKIN, H
;
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MERRITT, FR
;
MAHAJAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MAHAJAN, S
.
APPLIED PHYSICS LETTERS,
1984,
45
(12)
:1275
-1277
[7]
VAPOR GROWTH OF INGAAS AND INP ON (100), (110), (111), (311) AND (511) INP SUBSTRATES
[J].
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
OLSEN, GH
;
ZAMEROWSKI, TJ
论文数:
0
引用数:
0
h-index:
0
ZAMEROWSKI, TJ
;
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
.
JOURNAL OF CRYSTAL GROWTH,
1982,
59
(03)
:654
-658
[8]
PLANAR-EMBEDDED INGAASP/INP HETEROSTRUCTURE LASER WITH A SEMIINSULATING INP CURRENT-BLOCKING LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
;
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
NAKAI, K
;
WAKAO, K
论文数:
0
引用数:
0
h-index:
0
WAKAO, K
;
KUNO, M
论文数:
0
引用数:
0
h-index:
0
KUNO, M
;
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
.
APPLIED PHYSICS LETTERS,
1987,
51
(14)
:1054
-1056
[9]
HIGH-SPEED DISTRIBUTED FEEDBACK LASERS GROWN BY HYDRIDE EPITAXY
[J].
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
KARLICEK, RF
论文数:
0
引用数:
0
h-index:
0
KARLICEK, RF
;
STREGE, KE
论文数:
0
引用数:
0
h-index:
0
STREGE, KE
;
BLAHA, JP
论文数:
0
引用数:
0
h-index:
0
BLAHA, JP
;
GABLA, PM
论文数:
0
引用数:
0
h-index:
0
GABLA, PM
;
SAVAGE, A
论文数:
0
引用数:
0
h-index:
0
SAVAGE, A
;
OATIS, K
论文数:
0
引用数:
0
h-index:
0
OATIS, K
.
APPLIED PHYSICS LETTERS,
1988,
53
(13)
:1156
-1158
←
1
→
共 9 条
[1]
BRIDGES TE, IN PRESS
[2]
FLYNN EJ, 1988, 11 IEEE INT SEM LAS, P216
[3]
FURTHER EVIDENCE OF CHROMIUM, MANGANESE, IRON, AND ZINC REDISTRIBUTION IN INDIUM-PHOSPHIDE AFTER ANNEALING
[J].
GAUNEAU, M
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
GAUNEAU, M
;
CHAPLAIN, R
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CHAPLAIN, R
;
RUPERT, A
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
RUPERT, A
;
RAO, EVK
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
RAO, EVK
;
DUHAMEL, N
论文数:
0
引用数:
0
h-index:
0
机构:
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
CTR NATL ETUD TELECOMMUN,PMS,MPC,F-92220 BAGNEUX,FRANCE
DUHAMEL, N
.
JOURNAL OF APPLIED PHYSICS,
1985,
57
(04)
:1029
-1035
[4]
THE GROWTH OF IRON DOPED SEMI-INSULATING INP BY HYDRIDE VAPOR-PHASE EPITAXY IN A NITROGEN AMBIENT
[J].
KARLICEK, RF
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
KARLICEK, RF
.
JOURNAL OF CRYSTAL GROWTH,
1988,
91
(1-2)
:33
-38
[5]
REPRODUCIBLE LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASP BURIED HETEROSTRUCTURE LASERS
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
BLAHA, JP
论文数:
0
引用数:
0
h-index:
0
BLAHA, JP
;
STREGE, KE
论文数:
0
引用数:
0
h-index:
0
STREGE, KE
.
APPLIED PHYSICS LETTERS,
1987,
51
(18)
:1407
-1409
[6]
GAINASP-INP BURIED HETEROSTRUCTURE FORMATION BY LIQUID-PHASE EPITAXY
[J].
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
LOGAN, RA
;
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
TEMKIN, H
;
MERRITT, FR
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MERRITT, FR
;
MAHAJAN, S
论文数:
0
引用数:
0
h-index:
0
机构:
AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA
MAHAJAN, S
.
APPLIED PHYSICS LETTERS,
1984,
45
(12)
:1275
-1277
[7]
VAPOR GROWTH OF INGAAS AND INP ON (100), (110), (111), (311) AND (511) INP SUBSTRATES
[J].
OLSEN, GH
论文数:
0
引用数:
0
h-index:
0
OLSEN, GH
;
ZAMEROWSKI, TJ
论文数:
0
引用数:
0
h-index:
0
ZAMEROWSKI, TJ
;
HAWRYLO, FZ
论文数:
0
引用数:
0
h-index:
0
HAWRYLO, FZ
.
JOURNAL OF CRYSTAL GROWTH,
1982,
59
(03)
:654
-658
[8]
PLANAR-EMBEDDED INGAASP/INP HETEROSTRUCTURE LASER WITH A SEMIINSULATING INP CURRENT-BLOCKING LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
[J].
SANADA, T
论文数:
0
引用数:
0
h-index:
0
SANADA, T
;
NAKAI, K
论文数:
0
引用数:
0
h-index:
0
NAKAI, K
;
WAKAO, K
论文数:
0
引用数:
0
h-index:
0
WAKAO, K
;
KUNO, M
论文数:
0
引用数:
0
h-index:
0
KUNO, M
;
YAMAKOSHI, S
论文数:
0
引用数:
0
h-index:
0
YAMAKOSHI, S
.
APPLIED PHYSICS LETTERS,
1987,
51
(14)
:1054
-1056
[9]
HIGH-SPEED DISTRIBUTED FEEDBACK LASERS GROWN BY HYDRIDE EPITAXY
[J].
TEMKIN, H
论文数:
0
引用数:
0
h-index:
0
TEMKIN, H
;
LOGAN, RA
论文数:
0
引用数:
0
h-index:
0
LOGAN, RA
;
KARLICEK, RF
论文数:
0
引用数:
0
h-index:
0
KARLICEK, RF
;
STREGE, KE
论文数:
0
引用数:
0
h-index:
0
STREGE, KE
;
BLAHA, JP
论文数:
0
引用数:
0
h-index:
0
BLAHA, JP
;
GABLA, PM
论文数:
0
引用数:
0
h-index:
0
GABLA, PM
;
SAVAGE, A
论文数:
0
引用数:
0
h-index:
0
SAVAGE, A
;
OATIS, K
论文数:
0
引用数:
0
h-index:
0
OATIS, K
.
APPLIED PHYSICS LETTERS,
1988,
53
(13)
:1156
-1158
←
1
→