ANISOTROPIC LATERAL GROWTH IN GAAS MOCVD LAYERS ON (001) SUBSTRATES

被引：175

作者：

ASAI, H

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1987年 / 80卷 / 02期

关键词：

D O I：

10.1016/0022-0248(87)90091-1

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：425 / 433

页数：9

共 16 条

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