SE DOPING MECHANISMS IN MOCVD GAAS-LAYERS

被引：10

作者：

ASAI, H

SUGIURA, H

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 10期

关键词：

D O I：

10.1143/JJAP.24.L815

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：L815 / L817

页数：3

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