FREE CARRIER PROFILE SYNTHESIS IN MOCVD GROWN GAAS BY ATOMIC-PLANE DOPING

[1] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[2] FRIJLINK PM, 1982, JPN J APPL PHYS, V21, pL514

[3] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[4] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE GROWTH OF ALGAAS/GAAS QUANTUM WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L639 - L641

[5] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 383 - 387

[1] SILICON AND GERMANIUM DOPING OF EPITAXIAL GALLIUM-ARSENIDE GROWN BY THE TRIMETHYLGALLIUM-ARSINE METHOD [J]. JOURNAL OF CRYSTAL GROWTH, 1979, 47 (5-6) : 613 - 618

[2] FRIJLINK PM, 1982, JPN J APPL PHYS, V21, pL514

[3] MIYAZAKI T, 1975, ION IMPLANTATION SEM, P41

[4] INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE GROWTH OF ALGAAS/GAAS QUANTUM WELL HETEROSTRUCTURES BY ORGANOMETALLIC VAPOR-PHASE EPITAXY [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1983, 22 (10): : L639 - L641

[5] COMPLEX FREE-CARRIER PROFILE SYNTHESIS BY ATOMIC-PLANE DOPING OF MBE GAAS [J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 383 - 387