学术探索
学术期刊
新闻热点
数据分析
智能评审
立即登录
CHARACTERIZATION OF ORGANO-METALLIC VPE GROWN GAAS AND AIGAAS FOR SOLAR-CELL APPLICATIONS
被引:27
作者
:
AEBI, V
论文数:
0
引用数:
0
h-index:
0
AEBI, V
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
COOPER, CB
MOON, RL
论文数:
0
引用数:
0
h-index:
0
MOON, RL
SAXENA, RR
论文数:
0
引用数:
0
h-index:
0
SAXENA, RR
机构
:
来源
:
JOURNAL OF CRYSTAL GROWTH
|
1981年
/ 55卷
/ 03期
关键词
:
D O I
:
10.1016/0022-0248(81)90109-3
中图分类号
:
O7 [晶体学];
学科分类号
:
0702 ;
070205 ;
0703 ;
080501 ;
摘要
:
引用
收藏
页码:517 / 525
页数:9
相关论文
共 36 条
[1]
ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[2]
GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY
ALLENSON, M
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
ALLENSON, M
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(03)
: 113
-
115
[3]
BACHEM KH, 1979, OCT EL SOC M LOS ANG
[4]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1642
-
1646
[5]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[6]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[7]
GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
44
(01)
: 29
-
33
[8]
BERKMAN S, 1977, HETEROEPITAXIAL SEMI
[9]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1378
-
1382
[10]
TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
BHATTACHARYA, PK
KU, JW
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
KU, JW
OWEN, SJT
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
OWEN, SJT
AEBI, V
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
AEBI, V
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
COOPER, CB
MOON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
MOON, RL
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 304
-
306
←
1
2
3
4
→
共 36 条
[1]
ALFEROV ZI, 1970, SOV PHYS SEMICOND+, V3, P1234
[2]
GAAS REFLECTION PHOTOCATHODES GROWN BY METAL ALKYL VAPOR-PHASE EPITAXY
ALLENSON, M
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
ALLENSON, M
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
APPLIED PHYSICS LETTERS,
1976,
28
(03)
: 113
-
115
[3]
BACHEM KH, 1979, OCT EL SOC M LOS ANG
[4]
HETEROEPITAXIAL INAS GROWN ON GAAS FROM TRIETHYLINDIUM AND ARSINE .1. GROWTH CHARACTERIZATION
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECTROPHYS & ELECTR ENGN DIV,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1974,
121
(12)
: 1642
-
1646
[5]
TRANSPORT PHENOMENA MEASUREMENTS IN EPITAXIAL REACTORS
BAN, VS
论文数:
0
引用数:
0
h-index:
0
BAN, VS
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1978,
125
(02)
: 317
-
320
[6]
DEVICE QUALITY EPITAXIAL GALLIUM-ARSENIDE GROWN BY METAL ALKYL-HYDRIDE TECHNIQUE
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
机构:
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
SERV ELECTR RES LAB,BALDOCK SG7 6NG,HERTFORDSHIRE,ENGLAND
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1975,
31
(DEC)
: 172
-
178
[7]
GROWTH OF SEMI-INSULATING EPITAXIAL GALLIUM-ARSENIDE BY CHROMIUM DOPING IN METAL-ALKYL+HYDRIDE SYSTEM
BASS, SJ
论文数:
0
引用数:
0
h-index:
0
BASS, SJ
[J].
JOURNAL OF CRYSTAL GROWTH,
1978,
44
(01)
: 29
-
33
[8]
BERKMAN S, 1977, HETEROEPITAXIAL SEMI
[9]
VAPOR-PHASE ETCHING AND POLISHING OF GALLIUM-ARSENIDE USING HYDROGEN-CHLORIDE GAS
BHAT, R
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BHAT, R
BALIGA, BJ
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
BALIGA, BJ
GHANDHI, SK
论文数:
0
引用数:
0
h-index:
0
机构:
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
RENSSELAER POLYTECH INST,ELECT & SYST ENGN DEPT,TROY,NY 12181
GHANDHI, SK
[J].
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1975,
122
(10)
: 1378
-
1382
[10]
TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS
BHATTACHARYA, PK
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
BHATTACHARYA, PK
KU, JW
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
KU, JW
OWEN, SJT
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
OWEN, SJT
AEBI, V
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
AEBI, V
COOPER, CB
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
COOPER, CB
MOON, RL
论文数:
0
引用数:
0
h-index:
0
机构:
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
VARIAN ASSOCIATES,CORP SOLID STATE LAB,PALO ALTO,CA 94303
MOON, RL
[J].
APPLIED PHYSICS LETTERS,
1980,
36
(04)
: 304
-
306
←
1
2
3
4
→