LUMINESCENCE OF ALXGA1-XAS GROWN BY MOVPE

[1] ANDRE JP, 1981, I PHYS C SER, V56, P413

[2] ANDRE JP, 1977, I PHYS C SER A, V33

[3] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[4] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 304 - 306

[5] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[6] FABRE E, 1977, PHOTOVOLTAIC SOLAR E

[7] HALLAIS J, J ELECTRON MATER

[8] HALLAIS J, 1979, I PHYS C SER, V45, P361

[9] MIRCEAROUSSEL A, UNPUBLISHED

[10] MITONNEAU A, 1977, I PHYS C SER A, V33, P73

[1] ANDRE JP, 1981, I PHYS C SER, V56, P413

[2] ANDRE JP, 1977, I PHYS C SER A, V33

[3] BASS SJ, 1977, I PHYSICS C SERIES B, V33, P1

[4] TREND OF DEEP STATES IN ORGANOMETALLIC VAPOR-PHASE EPITAXIAL GAAS WITH VARYING AS-GA RATIOS [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 304 - 306

[5] ROOM-TEMPERATURE OPERATION OF GA(1-X)ALXAS-GAAS DOUBLE-HETEROSTRUCTURE LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J]. APPLIED PHYSICS LETTERS, 1977, 31 (07) : 466 - 468

[6] FABRE E, 1977, PHOTOVOLTAIC SOLAR E

[7] HALLAIS J, J ELECTRON MATER

[8] HALLAIS J, 1979, I PHYS C SER, V45, P361

[9] MIRCEAROUSSEL A, UNPUBLISHED

[10] MITONNEAU A, 1977, I PHYS C SER A, V33, P73