Hydride vapor phase epitaxy revisited

被引：60

作者：

Lourdudoss, S ^{[1
]}

Kjebon, O ^{[1
]}

机构：

[1] ROYAL INST TECHNOL, DEPT ELECT, LAB PHOTON & MICROWAVE ENGN, S-16440 KISTA, SWEDEN

来源：

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS | 1997年 / 3卷 / 03期

关键词：

III-V compounds; conformal growth; HBT; heteroepitaxy; high-speed lasers; integration; nanostructures; selective epitaxy; semi-insulating GaInP; semi-insulating InP; VCSEL; VPE;

D O I：

10.1109/2944.640630

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The salient features of hydride vapor phase epitaxy (HVPE) process in the fabrication of optoelectronic devices are demonstrated by combining the state of the art results of several groups working in this field.

引用

页码：749 / 767

页数：19

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